Author Of 1 Presentation
ANP - Advanced Nanophotonics Platform
WD2.3 - ULTRAHIGH TEMPERATURE MOLECULAR BEAM EPITAXY OF BORON NITRIDE AND ALUMINUM NITRIDE FOR ULTRAVIOLET PHOTONIC AND EXCITONIC DEVICES
Presentation Type
Invited Submission
Date
08/21/2019
Time
10:00 AM - 12:00 PM
Room
Emerald D
Duration
30 Minutes
Lecture Time
11:00 AM - 11:30 AM
Abstract
Abstract
We report on the achievement of superior quality hexagonal boron nitride and aluminum nitride using ultrahigh temperature molecular beam epitaxy. We demonstrate high efficiency deep ultraviolet LEDs and low threshold laser diodes. Moreover, ultrahigh Q microring resonators using aluminum nitride on sapphire are also achieved.
Presenter Of 1 Presentation
ANP - Advanced Nanophotonics Platform
WD2.3 - ULTRAHIGH TEMPERATURE MOLECULAR BEAM EPITAXY OF BORON NITRIDE AND ALUMINUM NITRIDE FOR ULTRAVIOLET PHOTONIC AND EXCITONIC DEVICES
Presentation Type
Invited Submission
Date
08/21/2019
Time
10:00 AM - 12:00 PM
Room
Emerald D
Duration
30 Minutes
Lecture Time
11:00 AM - 11:30 AM
Abstract
Abstract
We report on the achievement of superior quality hexagonal boron nitride and aluminum nitride using ultrahigh temperature molecular beam epitaxy. We demonstrate high efficiency deep ultraviolet LEDs and low threshold laser diodes. Moreover, ultrahigh Q microring resonators using aluminum nitride on sapphire are also achieved.