Sandia National Laboratories

Author Of 1 Presentation

NPNMAP - Novel Phenomena and New Materials for Advanced Photonics

WE4.6 - CHARACTERIZATION OF INDUCED DEFECTS IN INASSB FROM PROTON IRRADIATION USING IN-SITU LIFETIME MEASUREMENTS

Abstract

Abstract

We have extracted the dominant or aggregate effects of induced defects’ trap energy and relative density from proton irradiation induced defects in InAs.9Sb.1 grown epitaxially on GaSb. This technique allows characterization of defect characteristics in a material that is difficult to measure using traditional methods.

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