Author Of 1 Presentation
OEDDIP - Optical Emitter/Detector Devices and Integrated Photonics
TuE4.3 - HIGH DETECTIVITY IN CMOS SUBSTRATE POWERED GRAPHENE P-I-N JUNCTION
Presentation Type
Contributed Submission
Authors
Date
08/20/2019
Time
03:30 PM - 06:00 PM
Room
Emerald E
Duration
15 Minutes
Lecture Time
04:30 PM - 04:45 PM
Abstract
Abstract
Sufficiently large depletion region for photocarrier generation and separation is a key factor for optoelectronic devices. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible - near-infrared, zero-bias and ultrafast photodetection.