Author Of 1 Presentation
OEDDIP - Optical Emitter/Detector Devices and Integrated Photonics
TuE4.1 - GRAPHENE-BASED PHOTOFET FOR OPTICAL AND RADIATION DETECTION
Presentation Type
Invited Submission
Authors
- M. Goldflam (US) Sandia National Laboratories
- T. Beechem (US) Sandia National Laboratories
- G. Vizkelethy (US) Sandia National Laboratories
- P. Thelen (US) Sandia National Laboratories
- J. Shank (US) Sandia National Laboratories
- R. Sarma (US) Sandia National Laboratories
- P. Davids (US) Sandia National Laboratories
- R. Harrison (US) Sandia National Laboratories
- S. Smith (US) Sandia National Laboratories
- J. Martin (US) Sandia National Laboratories
- N. Martinez (US) Sandia National Laboratories
- L. Friedrich (US) Sandia National Laboratories
- S. Howell (US) Naval Surface Warfare Center
- I. Ruiz (US) Sandia National Laboratories
Date
08/20/2019
Time
03:30 PM - 06:00 PM
Room
Emerald E
Duration
30 Minutes
Lecture Time
03:30 PM - 04:00 PM
Abstract
Abstract
We demonstrated graphene-based photo-field-effect-transistors fabricated from low-doped semiconductor substrates with various dielectrics. In deep depletion, carriers generated in the semiconductor accumulate at the dielectric-semiconductor interface modifying graphene’s conductivity. Consequently, monitoring graphene’s source-drain current permits real-time readout for detection with built-in gain from graphene's large transconductance.