Abstract

We demonstrated graphene-based photo-field-effect-transistors fabricated from low-doped semiconductor substrates with various dielectrics. In deep depletion, carriers generated in the semiconductor accumulate at the dielectric-semiconductor interface modifying graphene’s conductivity. Consequently, monitoring graphene’s source-drain current permits real-time readout for detection with built-in gain from graphene's large transconductance.

Abstract

This work presents III-V strained layer superlattice (SLS) detectors with an emphasis on InGaAs/InAsSb SLS designs. Compared to conventional InAs/In(Ga)Sb and InAs/InAsSb designs, InGaAs/InAsSb enables a wider design space for performance improvements. Various SLS designs and experimental results are provided and discussed.

Abstract

Sufficiently large depletion region for photocarrier generation and separation is a key factor for optoelectronic devices. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible - near-infrared, zero-bias and ultrafast photodetection.

Abstract

In this paper, we present the microwave resonator photoconductor (MRPC), a photoconductive detector architecture which couples an active mid-infrared pixel to a Ku band microwave resonator. We compare the room temperature sensitivity of our MRPC to a standard photoconductor, and discuss the potential advantages.

Abstract

Unlike conventional detectors that rely on photocurrent, the open circuit voltage photodetector architecture relies on a detector operating in zero bias. The output from the detector is coupled to the gate of a FET in sub-threshold region. Radiometric characterization of this detector will be discussed.

Abstract