WE4.1 - Plasmonic Crystals & Hyperbolic Wedges
AbstractFirst, I'll discuss how an atomic reconstruction occurring in a twisted bilayer graphene can create a network of structural solitons acting as a plasmonic crystal.Second, I'll discuss hyperfocusing of phonon polaritons in a wedge-shaped hexagonal boron nitride. Both phenomena can be imaged by near-field microscopy.
WE4.2 - SUBWAVELENGTH ENGINEERING OF PHOTONIC CRYSTAL UNIT CELL TO ENABLE ADVANCED FUNCTIONALITY
Simulations and experiments demonstrate that inclusion of subwavelength features inside the unit cell of photonic crystal nanobeams and rotation of the photonic crystal unit cell enable separate control over the mode distribution and polarization of light. Implications for quantum and topological photonics will be discussed.
WE4.3 - MODELLING OF MAGNETOSTRICTION FOR STRESS-IMAGING VIA NITROGEN VACANCY CENTERS IN DIAMOND
We simulate magnetization in Terfenol-D using the anisotropic domain rotation model for a stress-imaging sensor based on Nitrogen Vacancy(NV) centers in diamond. We show that the stress-profile can be reconstructed with high accuracy using NVs and that the error increases non-linearly with NV center depth.
WE4.4 - PROBING THE INFLUENCE OF DIELECTRIC ENVIRONMENT UPON VOLUME-CONFINED HYPERBOLIC POLARITONS
We employ nano-scale imaging and spectroscopy techniques to elucidate polariton characteristics as a function of the complex refractive index of the substrate. Although higher-order polariton modes exhibit wavelengths weakly sensitive to the environment, the principal mode strongly depends on the substrate dielectric constant
WE4.5 - NANOSCALE IMAGING AND SPECTROSCOPY OF CHARGE CARRIER DISTRIBUTION IN DOPED SILICON NANOWIRES BY THZ NANOSCOPY
We report on nanoscale carrier distribution and spectroscopy of doped silicon nanowires using terahertz (THz) time-domain nano-spectroscopy technique. We demonstrate the capability of THz-nanoscopy for probing and quantification of the order of doping levels in a single nanowire containing heterogeneously doped sections.
WE4.6 - CHARACTERIZATION OF INDUCED DEFECTS IN INASSB FROM PROTON IRRADIATION USING IN-SITU LIFETIME MEASUREMENTS
- C. Kadlec (US) Sandia National Laboratories
- M. Goldflam (US) Sandia National Laboratories
- E. Bielejec (US) Sandia National Laboratories
- E. Kadlec (US) Sandia National Laboratories
- P. Webster (US) Air Force Research Labs
- E. Anderson (US) Sandia National Laboratories
- J. Kim (US) Sandia National Laboratories
- P. Schultz (US) Sandia National Laboratories
- J. Klem (US) Sandia National Laboratories
- S. Hawkins (US) Sandia National Laboratories
- E. Shaner (US) Sandia National Laboratories
We have extracted the dominant or aggregate effects of induced defects’ trap energy and relative density from proton irradiation induced defects in InAs.9Sb.1 grown epitaxially on GaSb. This technique allows characterization of defect characteristics in a material that is difficult to measure using traditional methods.