08/21/2019 03:00 PM - 05:00 PM Emerald E
Time
03:00 PM - 05:00 PM
NPNMAP - Novel Phenomena and New Materials for Advanced Photonics
  • M. Fogler (US) University of California,San Diego

WE4.1 - Plasmonic Crystals & Hyperbolic Wedges

Presentation Type
Invited Submission
Authors
  • M. Fogler (US) University of California,San Diego
Date
08/21/2019
Time
03:00 PM - 05:00 PM
Room
Emerald E
Duration
30 Minutes
Lecture Time
03:00 PM - 03:30 PM

Abstract

Abstract

First, I'll discuss how an atomic reconstruction occurring in a twisted bilayer graphene can create a network of structural solitons acting as a plasmonic crystal.Second, I'll discuss hyperfocusing of phonon polaritons in a wedge-shaped hexagonal boron nitride. Both phenomena can be imaged by near-field microscopy.
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NPNMAP - Novel Phenomena and New Materials for Advanced Photonics
  • S. Weiss (US) Vanderbilt University

WE4.2 - SUBWAVELENGTH ENGINEERING OF PHOTONIC CRYSTAL UNIT CELL TO ENABLE ADVANCED FUNCTIONALITY

Presentation Type
Invited Submission
Authors
  • S. Weiss (US) Vanderbilt University
  • S. Hu (US) Vanderbilt University
Date
08/21/2019
Time
03:00 PM - 05:00 PM
Room
Emerald E
Duration
30 Minutes
Lecture Time
03:30 PM - 04:00 PM

Abstract

Abstract

Simulations and experiments demonstrate that inclusion of subwavelength features inside the unit cell of photonic crystal nanobeams and rotation of the photonic crystal unit cell enable separate control over the mode distribution and polarization of light. Implications for quantum and topological photonics will be discussed.

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NPNMAP - Novel Phenomena and New Materials for Advanced Photonics
  • D. Shishir (IN) Indian Institute of Technology Bombay, Powai, Mumbai 400076

WE4.3 - MODELLING OF MAGNETOSTRICTION FOR STRESS-IMAGING VIA NITROGEN VACANCY CENTERS IN DIAMOND

Presentation Type
Contributed Submission
Authors
  • V. Punyamoorty (IN) Indian Institute of Technology Bombay, Powai, Mumbai 400076
  • D. Shishir (IN) Indian Institute of Technology Bombay, Powai, Mumbai 400076
  • K. Saha (IN) Indian Institute of Technology Bombay, Powai, Mumbai 400076
Date
08/21/2019
Time
03:00 PM - 05:00 PM
Room
Emerald E
Duration
15 Minutes
Lecture Time
04:00 PM - 04:15 PM

Abstract

Abstract

We simulate magnetization in Terfenol-D using the anisotropic domain rotation model for a stress-imaging sensor based on Nitrogen Vacancy(NV) centers in diamond. We show that the stress-profile can be reconstructed with high accuracy using NVs and that the error increases non-linearly with NV center depth.

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NPNMAP - Novel Phenomena and New Materials for Advanced Photonics
  • A. Fali (UM) University of Georgia

WE4.4 - PROBING THE INFLUENCE OF DIELECTRIC ENVIRONMENT UPON VOLUME-CONFINED HYPERBOLIC POLARITONS

Presentation Type
Invited Submission
Authors
  • A. Fali (UM) University of Georgia
  • S. White (US) Vanderbilt University
  • T. Folland (US) Vanderbilt University
  • N. Aghamiri (US) University of Georgia
  • J. Caldwell (US) Vanderbilt University, Mechanical Engineering
  • R. Haglund (US) Vanderbilt University
  • Y. Abate (US)
Date
08/21/2019
Time
03:00 PM - 05:00 PM
Room
Emerald E
Duration
15 Minutes
Lecture Time
04:15 PM - 04:30 PM

Abstract

Abstract

We employ nano-scale imaging and spectroscopy techniques to elucidate polariton characteristics as a function of the complex refractive index of the substrate. Although higher-order polariton modes exhibit wavelengths weakly sensitive to the environment, the principal mode strongly depends on the substrate dielectric constant

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NPNMAP - Novel Phenomena and New Materials for Advanced Photonics
  • N. Aghamiri (US) University of Georgia

WE4.5 - NANOSCALE IMAGING AND SPECTROSCOPY OF CHARGE CARRIER DISTRIBUTION IN DOPED SILICON NANOWIRES BY THZ NANOSCOPY

Presentation Type
Invited Submission
Authors
  • N. Aghamiri (US) University of Georgia
  • G. Tutuncuoglu (US) georgia Institute of technology
  • A. Fali (UM) University of Georgia
  • M. Filler (US)
  • Y. Abate (US)
Date
08/21/2019
Time
03:00 PM - 05:00 PM
Room
Emerald E
Duration
15 Minutes
Lecture Time
04:30 PM - 04:45 PM

Abstract

Abstract

We report on nanoscale carrier distribution and spectroscopy of doped silicon nanowires using terahertz (THz) time-domain nano-spectroscopy technique. We demonstrate the capability of THz-nanoscopy for probing and quantification of the order of doping levels in a single nanowire containing heterogeneously doped sections.

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NPNMAP - Novel Phenomena and New Materials for Advanced Photonics
  • C. Kadlec (US) Sandia National Laboratories

WE4.6 - CHARACTERIZATION OF INDUCED DEFECTS IN INASSB FROM PROTON IRRADIATION USING IN-SITU LIFETIME MEASUREMENTS

Presentation Type
Invited Submission
Authors
  • C. Kadlec (US) Sandia National Laboratories
  • M. Goldflam (US) Sandia National Laboratories
  • E. Bielejec (US) Sandia National Laboratories
  • E. Kadlec (US) Sandia National Laboratories
  • P. Webster (US) Air Force Research Labs
  • E. Anderson (US) Sandia National Laboratories
  • J. Kim (US) Sandia National Laboratories
  • P. Schultz (US) Sandia National Laboratories
  • J. Klem (US) Sandia National Laboratories
  • S. Hawkins (US) Sandia National Laboratories
  • E. Shaner (US) Sandia National Laboratories
Date
08/21/2019
Time
03:00 PM - 05:00 PM
Room
Emerald E
Duration
15 Minutes
Lecture Time
04:45 PM - 05:00 PM

Abstract

Abstract

We have extracted the dominant or aggregate effects of induced defects’ trap energy and relative density from proton irradiation induced defects in InAs.9Sb.1 grown epitaxially on GaSb. This technique allows characterization of defect characteristics in a material that is difficult to measure using traditional methods.

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