NPNMAP - Novel Phenomena and New Materials for Advanced Photonics
  • C. Kadlec (US) Sandia National Laboratories

WE4.6 - CHARACTERIZATION OF INDUCED DEFECTS IN INASSB FROM PROTON IRRADIATION USING IN-SITU LIFETIME MEASUREMENTS

Presentation Type
Invited Submission
Authors
  • C. Kadlec (US) Sandia National Laboratories
  • M. Goldflam (US) Sandia National Laboratories
  • E. Bielejec (US) Sandia National Laboratories
  • E. Kadlec (US) Sandia National Laboratories
  • P. Webster (US) Air Force Research Labs
  • E. Anderson (US) Sandia National Laboratories
  • J. Kim (US) Sandia National Laboratories
  • P. Schultz (US) Sandia National Laboratories
  • J. Klem (US) Sandia National Laboratories
  • S. Hawkins (US) Sandia National Laboratories
  • E. Shaner (US) Sandia National Laboratories
Date
08/21/2019
Time
03:00 PM - 05:00 PM
Room
Emerald E
Duration
15 Minutes
Lecture Time
04:45 PM - 05:00 PM

Abstract

Abstract

We have extracted the dominant or aggregate effects of induced defects’ trap energy and relative density from proton irradiation induced defects in InAs.9Sb.1 grown epitaxially on GaSb. This technique allows characterization of defect characteristics in a material that is difficult to measure using traditional methods.

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