A. Allerman (US) Sandia National Laboratories
Sandia National LaboratoriesAuthor Of 1 Presentation
OIST - Optical Imaging and Sensing Technology
TuB2.2 - HEXAGONAL BN: RECENT ADVANCES AND POTENTIAL FOR UV OPTOELECTRONICS
Presentation Type
Invited Submission
Authors
Date
08/20/2019
Time
10:15 AM - 12:15 PM
Room
Sandpiper C/D
Duration
30 Minutes
Lecture Time
10:45 AM - 11:15 AM
Abstract
Abstract
Hexagonal Boron Nitride (hBN) is a wide-bandgap semiconductor with 2-dimensional crystal structure, much like graphene, and highly-compelling properties in the ultra-violet (UV) region. In this presentation, I will review advances in growth and characterization of hBN and discuss potential use in UV optoelectronics applications.