A. Allerman (US) Sandia National Laboratories

Sandia National Laboratories

Author Of 1 Presentation

OIST - Optical Imaging and Sensing Technology

TuB2.2 - HEXAGONAL BN: RECENT ADVANCES AND POTENTIAL FOR UV OPTOELECTRONICS

Abstract

Abstract

Hexagonal Boron Nitride (hBN) is a wide-bandgap semiconductor with 2-dimensional crystal structure, much like graphene, and highly-compelling properties in the ultra-violet (UV) region. In this presentation, I will review advances in growth and characterization of hBN and discuss potential use in UV optoelectronics applications.

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