G. Balakrishnan (US) Center for High Technology Materials (CHTM), University of New Mexico
Center for High Technology Materials (CHTM), University of New MexicoAuthor Of 2 Presentations
(SS LDNP) Special Symposium on Low Dimensional and Nanostructured Photonics
WF1.3 - ALL-DIELECTRIC METASURFACES: OPTICAL NONLINEARITIES AND EMISSION CONTROL
Presentation Type
Invited Submission
Authors
- P. Vabishchevich (US) Sandia National Laboratories
- A. Vaskin (DE) Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University
- S. Addamane (US) Center for High Technology Materials (CHTM), University of New Mexico
- N. Karl (US) Sandia National Laboratories
- S. Liu (US) Sandia National Laboratories
- A. Sharma (US) Center for High Technology Materials (CHTM), University of New Mexico
- G. Balakrishnan (US) Center for High Technology Materials (CHTM), University of New Mexico
- J. Reno (US) Sandia National Laboratories
- G. Keeler (US) Sandia National Laboratories
- G. Peake (US) Sandia National Laboratories
- M. Sinclair (US) Sandia National Laboratories
- I. Staude (DE) Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University
- I. Brener (US) Sandia National Laboratories
Date
10/02/2019
Time
08:30 AM - 10:00 AM
Room
La Vista C
Duration
30 Minutes
Lecture Time
09:30 AM - 10:00 AM
Abstract
Abstract
In this work we show our results on the harmonic generation and nonlinear frequency mixing enhanced by Mie modes in GaAs metasurfaces. Moreover, we show enhancement and directionality control of the quantum dot emission embedded in the metasurface.
(SS LDNP) Special Symposium on Low Dimensional and Nanostructured Photonics
WF3.3 - OPTICALLY PUMPED 1 μm LOW THRESHOLD PHOTONIC CRYSTAL SURFACE EMITTING LASERS GROWN ON GaAs SUBSTRATE
Presentation Type
Contributed Submission
Authors
- A. Kalapala (US) University of Texas at Arlington
- S. Yeom (US) University of Texas at Arlington
- S. Addamane (US) University of New Mexico
- K. Reilly (US) University of New Mexico
- A. Song (US) Stanford University
- R. Gibson (US) Air Force Research Laboratory
- G. Balakrishnan (US) Center for High Technology Materials (CHTM), University of New Mexico
- R. Bedford (US) Air Force Research Laboratory
- S. Fan (US) Stanford University, Electrical Engineering
- W. Zhou (US) University of Texas at Arlington
Date
10/02/2019
Time
01:30 PM - 03:00 PM
Room
La Vista C
Duration
15 Minutes
Lecture Time
02:30 PM - 02:45 PM
Abstract
Abstract
We report optically pumped 1 μm low threshold GaAs photonic crystal surface emitting lasers. The GaAs photonic crystal is etched on 3-period InGaAs/AlGaAs MQW heterostructure. A laser peak is achieved at 1,006 nm with a linewidth of 0.6 nm at 5 kW/cm2 threshold power density.