ThF1.1 - SCALING TOWARDS MONOLAYER PHOTONIC CRYSTAL LASERS
Abstract
Abstract
Energy efficiency is one of the grand challenges toward low energy-per-bit integrated photonics. We discuss progresses related to lasing gain medium scaling from conventional quantum well to quantum dot and monolayer 2D materials. We also discuss the lasing cavity scaling on various photonic crystal cavities.
ThF1.2 - TOP-DOWN ETCH PROCESSES FOR III-NITRIDE NANOPHOTONICS
Abstract
Abstract
Three-dimensional etch process in III-nitrides remain underdeveloped compared to other materials systems due to their apparent inertness to wet etchants. Here, we describe our recent work towards three-dimensional etching of III-nitride nano- and micro-structures using a two-step dry plus wet etch top-down approach.
ThF1.3 - HIGH-EFFICIENCY ALGAN TUNNEL JUNCTION DEEP ULTRAVIOLET LEDS OPERATING AT 265 NM
- A. Pandey (US) EECS, University of Michigan, Ann Arbor
- W. Shin (US) EECS, University of Michigan, Ann Arbor
- J. Gim (US) Department of Materials Science and Engineering, University of Michigan
- R. Hovden (US) Department of Materials Science and Engineering, University of Michigan
- Z. Mi (US) EECS, University of Michigan, Ann Arbor
Abstract
Abstract
Tunnel-injected deep ultraviolet LEDs using a ~2.5 nm GaN tunnel junction, with emission peak at 265 nm have been demonstrated with a maximum external quantum efficiency reaching ~8% and wall plug efficiency reaching ~4.5%.
ThF1.4 - ALGAN NANOCRYSTAL ULTRAVIOLET LEDS AND LASER DIODES
Abstract
Abstract
We have studied the epitaxy and fabrication of AlGaN nanocrystal LEDs in the UV-B and UV-C bands. By coupling with epitaxial Al layers, an electrically pumped plasmonic UV laser is demonstrated for the first time.