10/02/2019
08:30 AM - 10:00 AM
La Vista D/E
Time
08:30 AM - 10:00 AM
(SL) Semiconductor Lasers
WG1.1 - HIGH-POWER MID-INFRARED QUANTUM CASCADE SEMICONDUCTOR LASERS
Presentation Type
Tutorial Submission
Authors
- D. Botez (US) University of Wisconsin - Madison
- C. Boyle (US) University of Wisconsin - Madison
- J. Kirch (US) University of Wisconsin - Madison
- K. Oresick (US) University of Wisconsin - Madison
- C. Sigler (US) University of Wisconsin - Madison
- L. Mawst (US)
- D. Lindberg III (US) Intraband, LLC
- T. Earles (US) Intraband, LLC
Date
10/02/2019
Time
08:30 AM - 10:00 AM
Room
La Vista D/E
Duration
60 Minutes
Lecture Time
08:30 AM - 09:30 AM
Abstract
Abstract
Watt-range CW powers were achieved over the 3.8-10.8 micron wavelength range. Carrier-leakage suppression and fast carrier extraction allow quantum cascade lasers to reach internal efficiencies near fundamental limits (~ 92 %). Then, CW wall-plug efficiencies ≥ 40 % and powers ≥ 10 W become possible.
(SL) Semiconductor Lasers
WG1.2 - WIDELY TUNABLE TERAHERTZ METASURFACE QUANTUM-CASCADE LASERS
Presentation Type
Invited Submission
Date
10/02/2019
Time
08:30 AM - 10:00 AM
Room
La Vista D/E
Duration
30 Minutes
Lecture Time
09:30 AM - 10:00 AM
Abstract
Abstract
We present the latest advances on terahertz quantum-cascade vertical-external-cavity surface-emitting-lasers (VECSELs) that are designed for wide tuning of a single-mode (up to 25% fractional tuning). The enabling component is the amplifying reflectarray metasurface, which allows lasing in Fabry-Perot cavities on very low-order longitudinal modes.