MD3.1 - PHOTONIC INTEGRATION TECHNOLOGY FOR COHERENT OPTICAL COMMUNICATION SYSTEMS
Abstract
Abstract
Photonic integration technology is a key enabler of high bit-rate coherent optical communication systems. The integration of dissimilar optical elements on a common substrate has led to narrow linewidth widely tunable lasers, high performance I-Q modulators, and integrated coherent receivers. We review the fundamentals and latest developments.
MD3.2 - High-Speed Electro-Absorption Modulated Laser at 1.3 µm wavelength Based on Selective Area Growth Technique
- J. Shi (TW) Electrical Engineering Dept., National Central University
- Z. Ahmad (TW) Electrical Engineering Dept., National Central University
- R. Chao (TW) Electrical Engineering Dept., National Central University
- Y. Hung (TW) Photonics Dept., National Sun Yat-Sen University
- J. Chen (TW) Electrical Engineering Dept., National Chiao Tung University
- C. Wei (TW) Photonics Dept., National Sun Yat-Sen University
Abstract
Abstract
We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.
MD3.3 - IMPROVEMENT OF QUANTUM-WELL INTERMIXING THROUGH ADJUSTING P-DOPED LAYER FOR HIGH-PERFORMANCE SOA-INTEGRATED EAM
Abstract
Abstract
Large p-doping offset layer in a p-i-n heterostructure is proposed for Impurity free vacancy disordering (IFVD) quantum-well-intermixing (QWI) in a SOA-integrated EAM. The P-dopant diffusion during QWI can thus be reduced for performing bandgap engineering, leading to high-speed modulation of 30Gb/s and improving modulation efficiency.