10/01/2019 08:30 AM - 10:00 AM La Vista A/B
Time
08:30 AM - 10:00 AM
(PSSI) Photodetectors, Sensors, Systems and Imaging
  • N. Nassem (TW) Electrical Engineering Dept., National Central University

TuE1.1 - HIGH-SPEED AND WIDE DYNAMIC RANGE AVALANCHE PHOTODIODE FOR COHERENT LIDAR APPLICATION

Presentation Type
Contributed Submission
Authors
  • J. Shi (TW) Electrical Engineering Dept., National Central University
  • H. Zhao (TW) Electrical Engineering Dept., National Central University
  • N. Nassem (TW) Electrical Engineering Dept., National Central University
  • A. Jones (US) University of Virginia, Department of Electrical and Computer Engineering
  • J. Campbell (US)
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
08:30 AM - 08:45 AM

Abstract

Abstract

A high-sensitivity and a high-power photo-receiver is preferred in coherent lidar system. In this work, we demonstrate top-illuminated APDs, which can simultaneously exhibit low excess noise (k<0.1) and wide 3-dB bandwidth (14GHz) with high responsivity (6.7A/W) under the operation at saturation output (3 mA).

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(PSSI) Photodetectors, Sensors, Systems and Imaging
  • S. Ahmed (US) University of Virginia

TuE1.2 - UNDERSTANDING THE ROLE OF MINIGAPS IN APDS: TOWARDS DESIGNING A BETTER PHOTODETECTOR

Presentation Type
Contributed Submission
Authors
  • S. Ahmed (US) University of Virginia
  • J. Zheng (US) University of Virginia
  • Y. Tan (US) Synopsys
  • J. Campbell (US) University of Virginia
  • A. Ghosh (US) University of Virginia
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
08:45 AM - 09:00 AM

Abstract

Abstract

Superior performance of digital alloy APDs is attributed to the formation of "minigaps" in the material bandstructure. However, no improvement is observed in dilute nitride APDs in presence of minigaps. We propose criteria which can judge the effectiveness of these minigaps.

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(PSSI) Photodetectors, Sensors, Systems and Imaging
  • M. Hossain (US) University of New Mexico

TuE1.3 - CMOS COMPATIBLE DUAL AVALANCHE PHOTODIODE FOR ALGORITHMIC VISIBLE SPECTRAL SENSING

Presentation Type
Contributed Submission
Authors
  • M. Hossain (US) University of New Mexico
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:00 AM - 09:15 AM

Abstract

Abstract

A previously reported CMOS-compatible dual avalanche photodiode design is exploited to develop a maximum-likelihood spectral-sensing algorithm, which maps the dual photocurrents to the monochromatic light’s wavelength. Optimization over the reverse biases of the two APDs yields a spectral resolution of 10 nm within 440-650 nm.

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(PSSI) Photodetectors, Sensors, Systems and Imaging
  • O. Pitts (CA) National Research Council Canada

TuE1.4 - EDGE BREAKDOWN SUPPRESSION OF AVALANCHE PHOTODIODES USING ZN DIFFUSION AND SELECTIVE AREA GROWTH

Presentation Type
Contributed Submission
Authors
  • O. Pitts (CA) National Research Council Canada
  • O. Salehzadeh (CA) National Research Council Canada
  • G. Bonneville (CA) National Research Council Canada
  • A. SpringThorpe (CA) National Research Council Canada
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:15 AM - 09:30 AM

Abstract

Abstract

Avalanche photodiodes are fabricated and characterized, using a single diffusion fabrication process with the surface patterned by selective area growth prior to diffusion. Raster mapping of the photocurrent near the breakdown voltage is used to characterize the electric field distribution in the multiplication layer.

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(PSSI) Photodetectors, Sensors, Systems and Imaging
  • J. Huang (US) Source Photonics

TuE1.5 - HIGH-SPEED INGAAS/INALAS SACM AVALANCHE PHOTODIODES WITH ROBUST OPTICAL & ELECTRICAL OVERLOAD

Presentation Type
Contributed Submission
Authors
  • J. Huang (US) Source Photonics
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:30 AM - 09:45 AM

Abstract

Abstract

We study the optical and electrical overload of high-speed InGaAs/InAlAs avalanche photodiodes for PON applications. We achieve robust optical overload at +4dBm with successful suppression of surface charge accumulation and multiplication-layer junction breakdown. Physical model of surface state charge accumulation under optical stress is presented.

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(PSSI) Photodetectors, Sensors, Systems and Imaging
  • J. Huang (CN) ShanghaiTech University

TuE1.6 - CHARACTERIZATION OF DEEP LEVELS IN INP BASED INGAASBI PHOTODETECTOR

Presentation Type
Contributed Submission
Authors
  • J. Huang (CN) ShanghaiTech University
  • B. Chen (CN) ShanghaiTech University
  • Z. Deng (CN) ShanghaiTech University
  • Y. Gu (CN) Shanghai Institute of Microsystem and Information Technology
  • Y. Ma (CN) Shanghai Institute of Microsystem and Information Technology
  • J. Zhang (CN) Shanghai Institute of Microsystem and Information Technology
  • X. Chen (CN) Shanghai Institute of Technical Physics
  • J. Shao (CN) Shanghai Institute of Technical Physics
Date
10/01/2019
Time
08:30 AM - 10:00 AM
Room
La Vista A/B
Duration
15 Minutes
Lecture Time
09:45 AM - 10:00 AM

Abstract

Abstract

In this work, low frequency noise spectroscopy and temperature varied photoluminescence was used to characterize the defect levels in InGaAsBi photodetector. Both of these independent techniques have found some deep levels, and some of which are the consistent.

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