(NANO) Nanophotonics
  • A. Anopchenko (US) Department of Physics, Baylor University

MB3.3 - FIELD ENHANCEMENT OF EPSILON-NEAR-ZERO MODES IN ATOMIC-LAYER-DEPOSITED ZNO:AL NANOLAYERS

Presentation Type
Contributed Submission
Authors
  • A. Anopchenko (US) Department of Physics, Baylor University
  • S. Gurung (US) Department of Physics, Baylor University
  • S. Bej (US) Department of Physics, Baylor University
  • J. Joyner (US) Department of Physics, Baylor University
  • H. Lee (US) Department of Physics, Baylor University
Date
09/30/2019
Time
01:30 PM - 02:45 PM
Room
El Mirador B
Duration
15 Minutes
Lecture Time
02:30 PM - 02:45 PM

Abstract

Abstract

We derive an expression for electric-field intensity enhancement due to the epsilon-near-zero modes in ultra-thin conducting layers. We show that absorptance and field enhancement in aluminum-doped zinc oxide nanolayers grown by atomic layer deposition are controlled by nanolayer thickness and optical losses.

Collapse