Z. Ahmad (TW) Electrical Engineering Dept., National Central University
Electrical Engineering Dept., National Central UniversityAuthor Of 1 Presentation
(PIP) Photonic Integration and Packaging
MD3.2 - High-Speed Electro-Absorption Modulated Laser at 1.3 µm wavelength Based on Selective Area Growth Technique
Presentation Type
Contributed Submission
Authors
- J. Shi (TW) Electrical Engineering Dept., National Central University
- Z. Ahmad (TW) Electrical Engineering Dept., National Central University
- R. Chao (TW) Electrical Engineering Dept., National Central University
- Y. Hung (TW) Photonics Dept., National Sun Yat-Sen University
- J. Chen (TW) Electrical Engineering Dept., National Chiao Tung University
- C. Wei (TW) Photonics Dept., National Sun Yat-Sen University
Date
09/30/2019
Time
01:30 PM - 03:00 PM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
02:30 PM - 02:45 PM
Abstract
Abstract
We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.
Presenter Of 1 Presentation
(PIP) Photonic Integration and Packaging
MD3.2 - High-Speed Electro-Absorption Modulated Laser at 1.3 µm wavelength Based on Selective Area Growth Technique
Presentation Type
Contributed Submission
Authors
- J. Shi (TW) Electrical Engineering Dept., National Central University
- Z. Ahmad (TW) Electrical Engineering Dept., National Central University
- R. Chao (TW) Electrical Engineering Dept., National Central University
- Y. Hung (TW) Photonics Dept., National Sun Yat-Sen University
- J. Chen (TW) Electrical Engineering Dept., National Chiao Tung University
- C. Wei (TW) Photonics Dept., National Sun Yat-Sen University
Date
09/30/2019
Time
01:30 PM - 03:00 PM
Room
El Mirador C West
Duration
15 Minutes
Lecture Time
02:30 PM - 02:45 PM
Abstract
Abstract
We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.